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R2104 IC Explorer : High- and low-side MOSFET/IGBT gate driver

Explore the IR2104 DIP-8 pinout, key specifications, and typical half-bridge gate-driver applications.

R2104 IC Explorer : High- and low-side MOSFET/IGBT gate driver
IR2104 Interactive IC Explorer
DIP-8
PIN EXPLORER
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DATASHEET
IC PIN EXPLORER

Click a pin in the explorer to see its specifications.

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About the IR2104

The IR2104 is a high-voltage half-bridge gate-driver IC designed to drive one high-side and one low-side MOSFET or IGBT. Its HO output drives the high-side switch relative to the floating VS pin, while LO drives the low-side switch relative to COM.

The IR2104 uses a logic input (IN) and shutdown input (SD). It includes internal dead-time behavior and undervoltage lockout. It is a gate driver—not a complete motor controller, inverter, or power supply. Consult the current manufacturer datasheet for the truth table, limits, and design details for your exact package and suffix.

IR2104 Specifications

Parameter Summary
Device function High- and low-side MOSFET/IGBT gate driver
Outputs HO (floating high-side output) and LO (low-side output)
Logic inputs IN and SD
Driver supply (VCC) Typically operated within 10–20 V; confirm conditions and limits in the datasheet
High-side offset rating Up to 600 V, subject to datasheet conditions; this is not the gate-drive supply voltage
Package shown DIP-8 configuration; confirm the suffix and package of the device you have
Protection and timing Undervoltage lockout and internal dead-time behavior

Electrical limits and switching performance depend on operating conditions. Do not treat the IC Explorer visualization as a substitute for the manufacturer datasheet.

IR2104 Applications

  • Half-bridge MOSFET or IGBT power stages
  • Switching DC–DC converter stages
  • Motor-drive power stages when used with a suitable control circuit
  • Inverter legs and other half-bridge switching circuits

Typical high-side operation uses a bootstrap diode and capacitor between the driver supply and floating supply pins. Component selection, gate resistance, decoupling, layout, and switch timing must follow the datasheet and the requirements of the power stage.

Safety: Half-bridge circuits may contain dangerous voltages and high fault currents. Use appropriate isolation, current limiting, rated components, and safe test procedures. The 600 V offset rating is not permission to handle or test an energized high-voltage circuit without suitable expertise and equipment.

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